Moteur de recherche de fiches techniques de composants électroniques |
|
IRLH5036TR2PBF Fiches technique(PDF) 2 Page - International Rectifier |
|
IRLH5036TR2PBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 8 page IRLH5036PbF 2 www.irf.com Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 0.5 RθJC (Top) Junction-to-Case f ––– 15 °C/W RθJA Junction-to-Ambient g ––– 35 RθJA (<10s) Junction-to-Ambient g ––– 22 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.7 4.4 ––– 4.6 5.5 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 109 ––– ––– S Qg Total Gate Charge ––– 90 ––– nC Qg Total Gate Charge ––– 44 66 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.5 ––– Qgd Gate-to-Drain Charge ––– 18 ––– Qgodr Gate Charge Overdrive ––– 12 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 23 ––– Qoss Output Charge ––– 21 ––– nC RG Gate Resistance ––– 1.2 ––– Ω td(on) Turn-On Delay Time ––– 23 ––– tr Rise Time ––– 48 ––– td(off) Turn-Off Delay Time ––– 28 ––– tf Fall Time ––– 15 ––– Ciss Input Capacitance ––– 5360 ––– Coss Output Capacitance ––– 600 ––– Crss Reverse Transfer Capacitance ––– 250 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 28 42 ns Qrr Reverse Recovery Charge ––– 134 201 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance MOSFET symbol nA ns A pF nC VDS = 30V ––– VGS = 16V VGS = -16V ––– ––– 400 ––– ––– 100h Conditions VGS = 0V, ID = 250uA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 50A e Conditions Max. 286 50 ƒ = 1.0MHz TJ = 25°C, IF = 50A, VDD = 30V di/dt = 500A/µs eà TJ = 25°C, IS = 50A, VGS = 0V e showing the integral reverse p-n junction diode. ––– RG=1.7Ω VDS = 25V, ID = 50A VDS = 60V, VGS = 0V, TJ = 125°C µA ID = 50A ID = 50A VGS = 0V VDS = 25V VDS = VGS, ID = 150µA VGS = 4.5V Typ. VDS = 60V, VGS = 0V VDS = 16V, VGS = 0V VDD = 30V, VGS = 4.5V VGS = 10V, VDS = 30V, ID = 50A VGS = 4.5V, ID = 50A e m Ω D S G |
Numéro de pièce similaire - IRLH5036TR2PBF |
|
Description similaire - IRLH5036TR2PBF |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |