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IRLH5036TR2PBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRLH5036TR2PBF
Description  HEXFET Power MOSFET
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRLH5036TR2PBF Fiches technique(HTML) 2 Page - International Rectifier

  IRLH5036TR2PBF Datasheet HTML 1Page - International Rectifier IRLH5036TR2PBF Datasheet HTML 2Page - International Rectifier IRLH5036TR2PBF Datasheet HTML 3Page - International Rectifier IRLH5036TR2PBF Datasheet HTML 4Page - International Rectifier IRLH5036TR2PBF Datasheet HTML 5Page - International Rectifier IRLH5036TR2PBF Datasheet HTML 6Page - International Rectifier IRLH5036TR2PBF Datasheet HTML 7Page - International Rectifier IRLH5036TR2PBF Datasheet HTML 8Page - International Rectifier  
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IRLH5036PbF
2
www.irf.com
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC (Bottom)
Junction-to-Case
f
–––
0.5
RθJC (Top)
Junction-to-Case
f
–––
15
°C/W
RθJA
Junction-to-Ambient
g
–––
35
RθJA (<10s)
Junction-to-Ambient
g
–––
22
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.7
4.4
–––
4.6
5.5
VGS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-6.6
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
109
–––
–––
S
Qg
Total Gate Charge
–––
90
–––
nC
Qg
Total Gate Charge
–––
44
66
Qgs1
Pre-Vth Gate-to-Source Charge
–––
9.5
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.5
–––
Qgd
Gate-to-Drain Charge
–––
18
–––
Qgodr
Gate Charge Overdrive
–––
12
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
23
–––
Qoss
Output Charge
–––
21
–––
nC
RG
Gate Resistance
–––
1.2
–––
td(on)
Turn-On Delay Time
–––
23
–––
tr
Rise Time
–––
48
–––
td(off)
Turn-Off Delay Time
–––
28
–––
tf
Fall Time
–––
15
–––
Ciss
Input Capacitance
–––
5360
–––
Coss
Output Capacitance
–––
600
–––
Crss
Reverse Transfer Capacitance
–––
250
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current ™
A
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
134
201
nC
ton
Forward Turn-On Time
Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
VDS = 30V
–––
VGS = 16V
VGS = -16V
–––
–––
400
–––
–––
100h
Conditions
VGS = 0V, ID = 250uA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 50A e
Conditions
Max.
286
50
ƒ = 1.0MHz
TJ = 25°C, IF = 50A, VDD = 30V
di/dt = 500A/µs
TJ = 25°C, IS = 50A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
–––
RG=1.7Ω
VDS = 25V, ID = 50A
VDS = 60V, VGS = 0V, TJ = 125°C
µA
ID = 50A
ID = 50A
VGS = 0V
VDS = 25V
VDS = VGS, ID = 150µA
VGS = 4.5V
Typ.
VDS = 60V, VGS = 0V
VDS = 16V, VGS = 0V
VDD = 30V, VGS = 4.5V
VGS = 10V, VDS = 30V, ID = 50A
VGS = 4.5V, ID = 50A e
m
D
S
G


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