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IRF7303QPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7303QPBF
Description  HEXFETPOWERMOSET
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7303QPBF Fiches technique(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
Description
IRF7303QPbF
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 10V
5.3
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
4.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
3.9
IDM
Pulsed Drain Current 
20
PD @TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
VDSS = 30V
RDS(on) = 0.050Ω
08/02/10
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient„
–––
62.5
°C/W
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dual N Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
150°C Operating Temperature
l
Lead-Free
These HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
www.irf.com
1
PD - 96103A


Numéro de pièce similaire - IRF7303QPBF_10

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International Rectifier
IRF7303QPBF IRF-IRF7303QPBF Datasheet
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