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IRF7307QPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7307QPBF
Description  HEXFETPOWERMOSFET
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7307QPBF Fiches technique(HTML) 1 Page - International Rectifier

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IRF7307QPbF
HEXFET® Power MOSFET
08/02/10
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Description
N-Ch
P-Ch
VDSS
20V
-20V
RDS(on) 0.050Ω 0.090Ω
Max.
N-Channel
P-Channel
ID @ TA = 25°C
10 Sec. Pulse Drain Current, VGS @ 4.5V
5.7-4.7
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
5.2
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
4.1
-3.4
IDM
Pulsed Drain Current 
21
-17
PD@TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Parameter
Units
A
Absolute Maximum Ratings
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient„
–––
62.5
°C/W
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
150°C Operating Temperature
l
Lead-Free
These HEXFET® Power MOSFET's in a Dual SO-
8 package utilize the lastest processing techniques
to achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction
operating
temperature, fast switching speed and improved
repetitiveavalancherating.Thesebenefitscombine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
SO-8
www.irf.com
1
PD - 96106A


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