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IRF7307QPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7307QPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 10 page IRF7307QPbF HEXFET® Power MOSFET 08/02/10 D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Description N-Ch P-Ch VDSS 20V -20V RDS(on) 0.050Ω 0.090Ω Max. N-Channel P-Channel ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 4.5V 5.7-4.7 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.2 -4.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.1 -3.4 IDM Pulsed Drain Current 21 -17 PD@TA = 25°C Power Dissipation 2.0 W Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Units A Absolute Maximum Ratings Thermal Resistance Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free These HEXFET® Power MOSFET's in a Dual SO- 8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitiveavalancherating.Thesebenefitscombine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 www.irf.com 1 PD - 96106A |
Numéro de pièce similaire - IRF7307QPBF_10 |
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Description similaire - IRF7307QPBF_10 |
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