52098HA (KT)/53094TH (KOYO) X-7245 No.4336-1/3

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N-Channel Junction Silicon FET

Low-Frequency General-Purpose Amp,

Differential Amp, Analog Switch Applications

Ordering number:EN4336

FC13

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Pl

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2W

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–

Package Dimensions

unit:mm

2095A

[FC13]

1:Source1

2:Drain1

3:Gate2

4:Source2

5:Drain2

6:Gate1

SANYO:CP6

Features

· Composite type with 2 FETs contained in the CP

package currently in use, improving the mounting

efficiency greatly.

· The FC13 is formed with two chips, being equivalent

to the 2SK303, placed in one package.

· Excellent in thermal equilibrium and pair capability

and especially suited for differential amp.

Electrical Connection

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

˚C

Electrical Characteristics at Ta = 25˚C

The specifications shown above are for each individual transistor.

0

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2

.

10

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6

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2

Marking:13

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Ω