SPI11N60S5 datasheet(5/12 Pages) INFINEON

No de pièce	SPI11N60S5

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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5 / 12 page

200

9-11-30

Rev. 2.

7

Page 5

SPP11N60S5

SPI11N60S5

1 Power dissipation

Ptot = f (TC)

0

20

40

60

80

100

120

°C

160

TC

0

10

20

30

40

50

60

70

80

90

100

110

120

W

140

SPP11N60S5

2 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TC=25°C

10

0

10

1

10

2

10

3

V

VDS

-2

10

-1

10

0

10

1

10

2

10

A

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

DC

3 Transient thermal impedance

ZthJC = f (tp)

parameter: D = tp/T

10

-7

10

-6

10

-5

10

-4

10

-3

10

-1

s

tp

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

4 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 10 µs, VGS

0

5

10

15

VDS

25

V

0

5

10

15

20

25

A

35

6V

7V

8V

9V

20V

12V

10V

Numéro de pièce similaire - SPI11N60S5

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	SPI11N60S5	335Kb / 12P	Cool MOS??Power Transistor Rev. 2.1 2004-03-30
Inchange Semiconductor ...	SPI11N60S5	305Kb / 2P	isc N-Channel MOSFET Transistor

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SPI11N60S5 Fiches technique(PDF) 5 Page - Infineon Technologies AG

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