SPI11N65C3 datasheet(2/15 Pages) INFINEON

No de pièce	SPI11N65C3

Description	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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2 / 15 page

200

9-11-30

Rev. 2.9

1

Page 2

SPP11N65C3,SPA11N65C3

SPI11N65C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

dv/dt

50

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

-

1

K/W

Thermal resistance, junction - case, FullPAK

RthJC_FP

-

3.8

Thermal resistance, junction - ambient, leaded

RthJA

-

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

-

80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

-

35

62

-

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Tsold

-

260

°C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage

V(BR)DSS VGS=0V, ID=0.25mA

650

-

V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=4A

-

730

-

Gate threshold voltage

VGS(th)

ID=500µA, VGS=VDS

2.1

3

3.9

Zero gate voltage drain current

IDSS

VDS=600V, VGS=0V,

Tj=25°C

Tj=150°C

-

0.1

-

1

100

µA

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

100

nA

Drain-source on-state resistance

RDS(on)

VGS=10V, ID=7A

Tj=25°C

Tj=150°C

-

0.34

0.92

0.38

-

Ω

Gate input resistance

RG

f=1MHz, open drain

-

0.86

-

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