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BCW33LT3G Fiches technique(PDF) 5 Page - ON Semiconductor

No de pièce BCW33LT3G
Description  General Purpose Transistor
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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BCW33LT1G
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5
TYPICAL DYNAMIC CHARACTERISTICS
Figure 14. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 15. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
500
0.5
10
50
70
100
200
300
0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
TJ = 25°C
f = 100 MHz
VCE = 20 V
5.0 V
1.0
2.0
3.0
5.0
7.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.05
TJ = 25°C
f = 1.0 MHz
Cib
Cob
Figure 16. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k 10k
20k 50k 100k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZqJA(t) = r(t) w RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
t1
t2
P(pk)
FIGURE 19A
Figure 16A.
TJ, JUNCTION TEMPERATURE (°C)
104
-4
0
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 16 was calculated for various duty cycles.
To find ZqJA(t), multiply the value obtained from Figure 16 by the
steady state value RqJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
10-2
10-1
100
101
102
103
-2
0
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc


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