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BCW33LT3G Fiches technique(PDF) 5 Page - ON Semiconductor |
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BCW33LT3G Fiches technique(HTML) 5 Page - ON Semiconductor |
5 / 6 page BCW33LT1G http://onsemi.com 5 TYPICAL DYNAMIC CHARACTERISTICS Figure 14. Current−Gain — Bandwidth Product IC, COLLECTOR CURRENT (mA) Figure 15. Capacitance VR, REVERSE VOLTAGE (VOLTS) 500 0.5 10 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 TJ = 25°C f = 100 MHz VCE = 20 V 5.0 V 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 TJ = 25°C f = 1.0 MHz Cib Cob Figure 16. Thermal Response t, TIME (ms) 1.0 0.01 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) w RqJA TJ(pk) − TA = P(pk) ZqJA(t) t1 t2 P(pk) FIGURE 19A Figure 16A. TJ, JUNCTION TEMPERATURE (°C) 104 -4 0 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 16 by the steady state value RqJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN−569. 10-2 10-1 100 101 102 103 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 VCC = 30 Vdc ICEO ICBO AND ICEX @ VBE(off) = 3.0 Vdc |
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