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BYD167A Fiches technique(PDF) 1 Page - EIC discrete Semiconductors |
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BYD167A Fiches technique(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BYD167A ULTRA FAST LOW-LOSS RECTIFIER PRV : 600 Volts Io : 2.0 Amperes FEATURES : * Glass passivated junction chip * High maximum operating temperature * Low leakage current * Excellent stability * Smallest surface mount rectifier outline * Pb / RoHS Free MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.067 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL UNIT Maximum Repetitive Peak Reverse Voltage VRRM V Maximum Continuous Reverse Voltage VR V Maximum Average Forward Current (Note 1) IF(AV) A Maximum Non-Repetitive Peak Forward Surge Current (Note 2) IFSM A Maximum Forward Voltage at IF = 1.0 A, TJ = 25 °C VF V Maximum Reverse Current at VR = VRRMmax TJ = 25 °C IR μA TJ = 150 °C IR(H) μA Maximum Reverse Recovery Time (Note 3) Trr ns Thermal Resistance from Junction to Tie-Point Rth j-tp K / W Thermal Resistance from Junction to Ambient (Note 4) Rth j-a K / W Junction Temperature Range TJ °C Storage Temperature Range TSTG °C Notes : (1) Ttp = 70 °C; averaged over any 20 ms period; see Fig. 1 (2) t=10ms half sine wave; Tj = Tjmax prior to surge; V R = VRRMmax (3) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. (4) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥ 40 μm. Page 1 of 2 Rev. 00 : February 13, 2008 RATING VALUE 600 600 2.0 - 65 to + 175 150 50 30 150 - 65 to + 175 25 1.25 5.0 2.0 ± 0.2 2.1 ± 0.2 SMA (DO-214AC) 1.2 ± 0.2 2.6 ± 0.15 Dimensions in millimeters 1.1 ± 0.3 0.2 ± 0.07 IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM |
Numéro de pièce similaire - BYD167A |
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Description similaire - BYD167A |
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