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BY254 Fiches technique(PDF) 1 Page - EIC discrete Semiconductors |
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BY254 Fiches technique(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BY251 - BY255 SILICON RECTIFIER DIODES PRV : 200 - 1300 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BY251 BY252 BY253 BY254 BY255 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 800 1300 V Maximum RMS Voltage VRMS 140 280 420 560 910 V Maximum DC Blocking Voltage VDC 200 400 600 800 1300 V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. VF 1.1 V Maximum DC Reverse Current Ta = 25 °C IR 20 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Typical Junction Capacitance (Note1) CJ 50 pF Typical Thermal Resistance (Note2) R θJA 18 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 25, 2005 IFSM 100 A RATING IF 3.0 A DO - 201AD Dimensions in inches and ( millimeters ) 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 1.00 (25.4) MIN. * Pb / RoHS Free |
Numéro de pièce similaire - BY254 |
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Description similaire - BY254 |
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