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NCE10G120 Fiches technique(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

No de pièce NCE10G120
Description  1200V, 10A, Trench NPT IGBT
Download  8 Pages
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Fabricant  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Site Internet  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE10G120 Fiches technique(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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NCE10G120
Pb Free Product
Thermal Characteristics
Symbol Parameter
Typ.
Max.
Units
RƟJC
Thermal Resistance, Junction to Case
-
0.9
°C/W
RƟJA
Thermal Resistance, Junction to Ambient
62
Electrical Characteristics of the IGBT T
C=25°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
VGE=0V, Ic=250uA
1200 -
-
V
ICES
Collector Cut-Off Current
VCE=VCES, VGE=0V
-
-
250
uA
IGES
G-E Leakage Current
VGE=VGES, VCE=0V
-
-
+/-250
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC=20mA, VCE=VGE
4.0
-
7.0
V
IC=20A, VGE=15V
TC=25°C
-
2
2.5
V
VCE(sat)
Collector to Emitter Saturation
Voltage
IC=20A, VGE=15V
TC=125°C
-
2.15
-
V
Dynamic Characteristics
Cies
Input Capacitance
-
606
-
pF
Coes
Output Capacitance
-
48
-
pF
Cres
Reverse Transfer
Capacitance
VCE=30V, VGE=0V,
f=1MHz
-
29
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
45
-
ns
tr
Rise Time
-
20
-
ns
td(off)
Turn-Off Delay Time
-
520
-
ns
tf
Fall Time
-
80
-
ns
Eon
Turn-On Switching Loss
-
0.68
-
mJ
Eoff
Turn-Off Switching Loss
-
0.78
-
mJ
Ets
Total Switching Loss
VCC=600V,IC=20A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
-
1.46
-
mJ
td(on)
Turn-On Delay Time
45
ns
tr
Rise Time
24
ns
td(off)
Turn-Off Delay Time
592
ns
tf
Fall Time
177
ns
Eon
Turn-On Switching Loss
0.83
mJ
Eoff
Turn-Off Switching Loss
1.19
mJ
Ets
Total Switching Loss
VCC=600V,IC=20A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
2.02
mJ


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