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NCE10G120 Fiches technique(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

No de pièce NCE10G120
Description  1200V, 10A, Trench NPT IGBT
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Fabricant  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Site Internet  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE10G120 Fiches technique(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

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NCE10G120
Pb Free Product
NCE10G120
1200V, 10A, Trench NPT IGBT
Features
Trench NPT( Non Punch Through) IGBT
High speed switching
Low saturation voltage: VCE(sat)=2.0V@IC=10A
High input impedance
Applications
Inductive heating, Microwave oven, Inverter, UPS, etc.
Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Symbol Description
Ratings
Units
VCES
Collector to Emitter Voltage
1200
V
VGES
Gate to Emitter Voltage
+/-25
V
Continuous Collector Current @TC=25°C
16
A
IC
Continuous Collector Current @TC=100°C
10
A
ICM(1)
Pulsed Collector Current
24
A
PD
Maximum Power Dissipation @TC=25°C
138
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
260
°C
G C E
C
E
G


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