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STP12NK60Z Fiches technique(PDF) 5 Page - STMicroelectronics |
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STP12NK60Z Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 15 page STP12NK60Z, STF12NK60Z, STW12NK60Z Electrical characteristics Doc ID 11324 Rev 7 5/15 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 10 40 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD = 50 V (see Figure 24) - 358 3 17 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150 °C (see Figure 24) - 460 4.2 18.2 ns µC A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ Max Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Gate-Source breakdown voltage Igs=± 1 mA (open drain) 30 - - V |
Numéro de pièce similaire - STP12NK60Z_09 |
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Description similaire - STP12NK60Z_09 |
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