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STF11NM80 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STF11NM80 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 17 page March 2010 Doc ID 9241 Rev 10 1/17 17 STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Application ■ Switching applications Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on- resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Figure 1. Internal schematic diagram Type VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 800 V < 0.40 Ω 14 Ω*nC 11 A STF11NM80 STP11NM80 STW11NM80 TO-247 D²PAK TO-220 TO-220FP 1 2 3 1 3 1 2 3 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 D²PAK Tape and reel STF11NM80 F11NM80 TO-220FP Tube STP11NM80 P11NM80 TO-220 STW11NM80 W11NM80 TO-247 www.st.com |
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Description similaire - STF11NM80 |
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