STP4NM60_09 datasheet(1/17 Pages) STMICROELECTRONICS

No de pièce	STP4NM60

Description	N-channel 600 V, 1.3 廓, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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September 2009

Doc ID 8370 Rev 4

1/17

17

STP4NM60

STD3NM60, STD3NM60-1

N-channel 600 V, 1.3

Ω, 3 A TO-220, DPAK, IPAK

Zener-protected MDmesh™ Power MOSFET

Features

■ High dv/dt and avalanche capabilities

■ Improved ESD capability

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Tight process control and high manufacturing

yields

Applications

■ Switching

Description

Modems technology applies the benefits of the

multiple drain process to STMicroelectronics' well-

known PowerMESH™ horizontal layout structure.

The resulting product offers low on-resistance,

high dv/dt capability and excellent avalanche

characteristics.

Figure 1.

Internal schematic diagram

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

PW

STD3NM60

650

< 1.5

Ω

3 A

42 W

STD3NM60-1

STP4NM60

4 A

69 W

1

2

3

1

3

2

1

TO-220

IPAK

DPAK

Table 1.

Device summary

Order code

Marking

Package

Packing

STD3NM60

D3NM60

DPAK

Tape and reel

STD3NM60-1

D3NM60

IPAK

Tube

STP4NM60

P4NM60

TO-220

Tube

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STMicroelectronics	STP4NM60	548Kb / 12P	N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET
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	STP4NK80Z	546Kb / 18P	N-channel 800V - 3廓 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH??MOSFET
	STD7NM80	977Kb / 17P	N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET
	STD3NK80Z	888Kb / 18P	N-channel 800 V, 3.8 廓, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET
	STX11NM60N	641Kb / 20P	N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
	STD2NK90Z	604Kb / 18P	N-channel 900V - 5廓 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH??MOSFET

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STP4NM60 Fiches technique(PDF) 1 Page - STMicroelectronics

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