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STB12NM50ND Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STB12NM50ND
Description  N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB12NM50ND Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB12NM50ND, STD12NM50ND, STF12NM50ND
4/16
Doc ID 14936 Rev 2
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
500
V
dv/dt(1)
1.
Value measured at turn off under inductive load
Drain-source voltage slope
VDD = 400 V,ID = 11 A,
VGS = 10 V
44
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 5.5 A
0.29
0.38
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID= 5.5 A
-
8
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f =1 MHz,
VGS = 0
-
850
48
5
-
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
-
100
-
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-4.5
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 11 A
VGS = 10 V
Figure 19
-
30
6
17
-
nC
nC
nC


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