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TEA1530AP Fiches technique(PDF) 10 Page - NXP Semiconductors

No de pièce TEA1530AP
Description  GreenChip II SMPS control IC
Download  21 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

TEA1530AP Fiches technique(HTML) 10 Page - NXP Semiconductors

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TEA1530T_AT_AP_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 June 2008
10 of 21
NXP Semiconductors
TEA1530T/AT/AP
GreenChip II SMPS control IC
7.14 Driver
The driver circuit to the gate of the power MOSFET has a current sourcing capability of
typically 150 mA and a current sink capability of typically, 500 mA at VCC = 9.5 V. At
VCC = 15 V, the current sourcing capability is typically 250 mA and the current sink
capability typically 0.7 A. This permits fast turning on and off of the power MOSFET for
efficient operation.
A low driver source current has been chosen to limit the
∆V/∆t at switch-on. This reduces
ElectroMagnetic Interference (EMI) and also limits the current spikes across Rsense.
8.
Limiting values
Fig 7.
Soft start-up
014aaa254
Css
Rss
SENSE
Rsense
Istartup(soft)
Vocp
start-up
6
0.5 V
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured
with respect to ground (pin 2); positive currents flow into the chip; pin VCC may not be current driven.
The voltage ratings are valid provided other ratings are not violated; current ratings are valid
provided the maximum power rating is not violated.
Symbol
Parameter
Conditions
Min
Max
Unit
Voltages
VCC
supply voltage
continuous
−0.4
+20
V
VPROTECT
voltage on pin PROTECT
continuous
−0.4
+5
V
VCTRL
voltage on pin CTRL
−0.4
+5
V
VSENSE
voltage on pin SENSE
current limited
−0.4
-
V
VDRAIN
voltage on pin DRAIN
−0.4
+650
V
Currents
ICTRL
current on pin CTRL
d < 10 %
-
50
mA
ISENSE
current on pin SENSE
−1
+10
mA
IDRIVER
current on pin DRIVER
d < 10 %
−0.8
+2
A
IDRAIN
current on pin DRAIN
-
5
mA


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