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BTA208S-800B Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BTA208S-800B Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 13 page 9397 750 14861 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 May 2005 2 of 13 Philips Semiconductors BTA208S-600B; BTA208S-800B Three-quadrant triacs high commutation 3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/ µs. Table 2: Ordering information Type number Package Name Description Version BTA208S-600B TO-252 plastic single-ended surface mounted package (DPAK); 3 leads (one lead cropped) SOT428 BTA208S-800B Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage BTA208S-600B [1] - 600 V BTA208S-800B - 800 V IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; see Figure 4 and 5 -8 A ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t=20ms - 65 A t = 16.7 ms - 71 A I2tI2t for fusing t = 10 ms - 21 A2s dIT/dt rate of rise of on-state current ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/ µs IGM peak gate current -2 A VGM peak gate voltage -5 V PGM peak gate power -5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C |
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