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BTA208S-800B Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BTA208S-800B
Description  Three-quadrant triacs high commutation
Download  13 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BTA208S-800B Fiches technique(HTML) 2 Page - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 31 May 2005
2 of 13
Philips Semiconductors
BTA208S-600B; BTA208S-800B
Three-quadrant triacs high commutation
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
µs.
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BTA208S-600B
TO-252
plastic single-ended surface mounted package (DPAK);
3 leads (one lead cropped)
SOT428
BTA208S-800B
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA208S-600B
[1] -
600
V
BTA208S-800B
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 102 °C;
see Figure 4 and 5
-8
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj = 25 °C prior to surge;
see Figure 2 and 3
t=20ms
-
65
A
t = 16.7 ms
-
71
A
I2tI2t for fusing
t = 10 ms
-
21
A2s
dIT/dt
rate of rise of on-state current
ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
-
100
A/
µs
IGM
peak gate current
-2
A
VGM
peak gate voltage
-5
V
PGM
peak gate power
-5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C


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