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BTA416Y-800C Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BTA416Y-800C Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page BTA416Y_SER_B_C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 March 2008 4 of 12 NXP Semiconductors BTA416Y series B and C 16 A 3-quadrant triacs insulated, high commutation, high temperature tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values f = 50 Hz; Tmb = 108 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values 003aab818 10 10 2 10 3 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) ITSM (A) (1) ITSM t IT Tj(init) = 25 °C max tp 003aab819 0 10 20 30 40 50 60 10 -2 10 -1 1 10 surge duration (s) IT(RMS) (A) 003aab820 0 4 8 12 16 20 -50 0 50 100 150 Tmb (°C) IT(RMS) (A) |
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