IRF7105 datasheet(6/10 Pages) IRF

No de pièce	IRF7105

Description	HEXFET POWER MOSFET

Download	10 Pages

Scroll/Zoom	100%

Fabricant	IRF [International Rectifier]

Site Internet	http://www.irf.com

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6 / 10 page

IRF7105

6

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Fig 18. Typical Source-Drain Diode

Forward Voltage

Fig 19. Maximum Safe Operating Area

Fig 22a. Gate Charge Test Circuit

Fig 20. Maximum Drain Current Vs.

Ambient Temperature

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T.

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

Fig 21b. Switching Time Waveforms

Fig 21a. Switching Time Test Circuit

QG

QGS

QGD

VG

Charge

Fig 22b. Basic Gate Charge Waveform

RG

VGS

VDS

RD

VDD

-10V

D.U.T.

VDS

ID

IG

-3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

-10V

P-Channel

VSD , Source-to-Drain Voltage ( V )

VDS , Drain-to-Source Voltage ( V )

TA , Ambient Temperature ( °C )

Numéro de pièce similaire - IRF7105

Fabricant	No de pièce	Fiches technique	Description
Microsemi Corporation	IRF7105	339Kb / 18P	EVALUATION KIT
International Rectifier	IRF7105PBF	302Kb / 10P	HEXFET짰 Power MOSFET
	IRF7105PBF	307Kb / 10P	Advanced Process Technology
	IRF7105PBF	307Kb / 10P	ADVANCED PROCESS TECHNOLOGY
	IRF7105PBF-1	615Kb / 10P	Industry-standard pinout SO-8 Package

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