BC856ALT1G datasheet(1/7 Pages) ONSEMI

No de pièce	BC856ALT1G

Description	General Purpose Transistors PNP Silicon

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Fabricant	ONSEMI [ON Semiconductor]

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August, 2009 − Rev. 11

Publication Order Number:

BC856ALT1/D

1

BC856ALT1G Series

General Purpose

Transistors

PNP Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC856

BC857

BC858, BC859

VCEO

−65

−45

−30

V

Collector-Base Voltage

BC856

BC857

BC858, BC859

VCBO

−80

−50

−30

V

Emitter−Base Voltage

VEBO

−5.0

V

Collector Current − Continuous

IC

−100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD

225

1.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

556

°C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD

300

2.4

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg −55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

SOT−23 (TO−236AB)

CASE 318

STYLE 6

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

xx M G

G

xx

= Device Code

xx = (Refer to page 6)

M

= Date Code*

G

=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

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