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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRFB4115PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFB4115PBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 8 page  11/10/08 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G GD S Gate Drain Source PD - 97354 IRFB4115PbF TO-220AB G D S VDSS 150V RDS(on) typ. 9.3mΩ max. 11mΩ ID (Silicon Limited) 104A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy f mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.40 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ij ––– 62 220 See Fig. 14, 15, 22a, 22b 380 18 A °C 300 Max. 104 74 420 -55 to + 175 ± 20 2.5 10lb xin (1.1Nxm) |
Numéro de pièce similaire - IRFB4115PBF |
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Description similaire - IRFB4115PBF |
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