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KM68512ALI Fiches technique(PDF) 4 Page - Samsung semiconductor |
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KM68512ALI Fiches technique(HTML) 4 Page - Samsung semiconductor |
4 / 9 page KM68512A Family CMOS SRAM Revision 4.0 January 1997 4 RECOMMENDED DC OPERATING CONDITIONS1) Note 1. Commercial Product : TA=0 to 70 °C, unless otherwise specified Industrial Product : TA=-40 to 85 °C, unless otherwise specified 2. Overshoot : VCC+3.0V in case of pulse width≤30ns 3. Undershoot : -3.0V in case of pulse width ≤30ns 4. Overshoot and undershoot are sampled, not 100% tested Item Symbol Min Typ Max Unit Supply voltage Vcc 4.5 5.0 5.5 V Ground Vss 0 0 0 V Input high voltage VIH 2.2 - Vcc+0.5V2) V Input low voltage VIL -0.53) - 0.8 V CAPACITANCE1)(f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 6 pF Input/Output capacitance CIO VIO=0V - 8 pF DC AND OPERATING CHARACTERISTICS Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL - 7 15 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, IIO=0mA CS1 ≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥Vcc -0.2V - - 10 mA ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL - - 70 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS1=VIH, CS2=VIL, Other inputs =VIH or VIL - - 3 mA Standby Current (CMOS) KM68512AL/L-L ISB1 CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V Other inputs =0 ~ Vcc Low Power Low Low Power - - 2 1 100 20 µA KM68512ALI/LI-L Low Power Low Low Power - - 2 1 100 50 µA |
Numéro de pièce similaire - KM68512ALI |
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Description similaire - KM68512ALI |
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