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KM416C4100B Fiches technique(PDF) 1 Page - Samsung semiconductor

No de pièce KM416C4100B
Description  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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KM416C4000B, KM416C4100B
CMOS DRAM
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this fam-
ily have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri-
cated using Samsung
′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
• Part Identification
- KM416C4000B(5.0V, 8K Ref.)
- KM416C4100B(5.0V, 4K Ref.)
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V
±10% power supply
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
• Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
KM416C4000B*
8K
64ms
KM416C4100B
4K
• Performance Range
Speed
tRAC
tCAC
tRC
tPC
-45
45ns
12ns
80ns
31ns
-5
50ns
13ns
90ns
35ns
-6
60ns
15ns
110ns
40ns
• Active Power Dissipation
Speed
8K
4K
-45
550
715
-5
495
660
-6
440
605
Unit : mW
Control
Clocks
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Memory Array
4,194,304 x 16
Cells
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ8
to
DQ15
OE
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer


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