KM4132G271BTQR-8 datasheet(9/51 Pages) SAMSUNG

No de pièce	KM4132G271BTQR-8

Description	128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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KM4132G271B

CMOS SGRAM

- 9 -

Rev. 2.4 (May 1998)

OPERATING AC PARAMETER

1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then

rounding off to the next higher integer.

2. Minimum delay is required to complete write.

3. This parameter means minimum CAS to CAS delay at block write cycle only.

4. In case of row precharge interrupt, auto precharge and read burst stop.

Note :

(AC operating conditions unless otherwise noted)

Parameter

Symbol

Version

Unit

Note

-7

-8

-10

Row active to row active delay

tRRD(min)

14

16

20

ns

1

RAS to CAS delay

tRCD(min)

16

20

ns

1

Row precharge time

tRP(min)

21

20

ns

1

Row active time

tRAS(min)

49

48

50

ns

1

tRAS(max)

100

us

Row cycle time

tRC(min)

70

ns

1

Last data in to new col. address delay

tCDL(min)

1

CLK

2

Last data in to row precharge

tRDL(min)

1

CLK

2

Last data in to burst stop

tBDL(min)

1

CLK

2

Col. address to col. address delay

tCCD(min)

1

CLK

3

Block write data-in to PRE command delay

tBPL(min)

1

CLK

Block write cycle time

tBWC(min)

1

CLK

1, 3

Number of valid output data

CAS latency=3

2

CLK

4

CAS latency=2

1

Numéro de pièce similaire - KM4132G271BTQR-8

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KM4132G271A	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
	KM4132G271A-10	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
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	KM4132G271A-8	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
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Description similaire - KM4132G271BTQR-8

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	KM4132G271A	1,000Kb / 48P	128K x 32Bit x 2 Banks Synchronous Graphic RAM
Samsung semiconductor	K4G323222M	1Mb / 48P	512K x 32Bit x 2 Banks Synchronous Graphic RAM
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	K4S643232C	1Mb / 43P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
	K4S643232E	102Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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KM4132G271BTQR-8 Fiches technique(PDF) 9 Page - Samsung semiconductor

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