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KM4132G271BQR-7 Fiches technique(PDF) 7 Page - Samsung semiconductor

No de pièce KM4132G271BQR-7
Description  128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
Download  51 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM4132G271BQR-7 Fiches technique(HTML) 7 Page - Samsung semiconductor

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KM4132G271B
CMOS SGRAM
- 7 -
Rev. 2.4 (May 1998)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C VIH(min) /VIL(max) =2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit
Note
-7
-8
-10
Operating Current
(One Bank Active)
ICC1
Burst Length =1
tRC
≥ tRC(min), tCC ≥ tCC(min), IOL = 0 mA
180
160
150
mA
1
Precharge Standby Current
in power-down mode
ICC2 P
CKE
≤ VIL(max), tCC = 15ns
2
mA
ICC2 PS
CKE
≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
2
Precharge Standby Current
in non power-down mode
ICC2 N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
35
mA
ICC2 NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
Active Standby Current
in power-down mode
ICC3 P
CKE
≤ VIL(max), tCC = 15ns
3
mA
ICC3 PS
CKE
≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
3
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3 N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
50
mA
ICC3 NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
25
Operating Current
(Burst Mode)
ICC4
IOL = 0 mA, Page Burst
All bank Activated, tCCD = tCCD (min)
3
300
280
210
mA
1
2
180
180
160
Refresh Current
ICC5
tRC
≥ tRC(min)
90
90
90
mA
2
Self Refresh Current
ICC6
CKE
≤ 0.2V
2
mA
Operating Current
(One Bank Block Write)
ICC7
tCC
≥ tCC(min), IOL=0mA, tBWC (min)
210
190
150
mA
Note : 1. Measured with outputs open. Addresses are changed only one time during tcc(min).
2. Refresh period is 32ms. Addresses are changed only one time during tcc(min).


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