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KM4132G271B Fiches technique(PDF) 7 Page - Samsung semiconductor |
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KM4132G271B Fiches technique(HTML) 7 Page - Samsung semiconductor |
7 / 51 page KM4132G271B CMOS SGRAM - 7 - Rev. 2.4 (May 1998) DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C VIH(min) /VIL(max) =2.0V/0.8V) Parameter Symbol Test Condition CAS Latency Speed Unit Note -7 -8 -10 Operating Current (One Bank Active) ICC1 Burst Length =1 tRC ≥ tRC(min), tCC ≥ tCC(min), IOL = 0 mA 180 160 150 mA 1 Precharge Standby Current in power-down mode ICC2 P CKE ≤ VIL(max), tCC = 15ns 2 mA ICC2 PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ 2 Precharge Standby Current in non power-down mode ICC2 N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 35 mA ICC2 NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 15 Active Standby Current in power-down mode ICC3 P CKE ≤ VIL(max), tCC = 15ns 3 mA ICC3 PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ 3 Active Standby Current in non power-down mode (One Bank Active) ICC3 N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 50 mA ICC3 NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 25 Operating Current (Burst Mode) ICC4 IOL = 0 mA, Page Burst All bank Activated, tCCD = tCCD (min) 3 300 280 210 mA 1 2 180 180 160 Refresh Current ICC5 tRC ≥ tRC(min) 90 90 90 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V 2 mA Operating Current (One Bank Block Write) ICC7 tCC ≥ tCC(min), IOL=0mA, tBWC (min) 210 190 150 mA Note : 1. Measured with outputs open. Addresses are changed only one time during tcc(min). 2. Refresh period is 32ms. Addresses are changed only one time during tcc(min). |
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