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74AUP1G57GNAC Fiches technique(PDF) 9 Page - NXP Semiconductors |
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74AUP1G57GNAC Fiches technique(HTML) 9 Page - NXP Semiconductors |
9 / 22 page 74AUP1G57 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 4 — 20 July 2010 9 of 22 NXP Semiconductors 74AUP1G57 Low-power configurable multiple function gate [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL. [3] All specified values are the average typical values over all stated loads. [4] CPD is used to determine the dynamic power dissipation (PD in μW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. CL = 30 pF tpd propagation delay A, B and C to Y; see Figure 12 [2] VCC = 0.8 V - 37.8 - - - - ns VCC = 1.1 V to 1.3 V 4.6 10.4 20.9 3.9 21.8 22.3 ns VCC = 1.4 V to 1.6 V 3.6 7.4 12.2 3.8 13.4 14.1 ns VCC = 1.65 V to 1.95 V 3.5 6.2 9.9 3.1 11.1 11.8 ns VCC = 2.3 V to 2.7 V 3.4 5.2 7.4 3.1 8.3 8.8 ns VCC = 3.0 V to 3.6 V 3.2 4.9 6.6 2.8 7.0 7.4 ns CL = 5 pF, 10 pF, 15 pF and 30 pF CPD power dissipation capacitance fi = 1 MHz; VI =GND to VCC [3][4] VCC = 0.8 V - 2.6 - - - - pF VCC = 1.1 V to 1.3 V - 2.8 - - - - pF VCC = 1.4 V to 1.6 V - 2.9 - - - - pF VCC = 1.65 V to 1.95 V - 3.1 - - - - pF VCC = 2.3 V to 2.7 V - 3.7 - - - - pF VCC = 3.0 V to 3.6 V - 4.3 - - - - pF Table 9. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 13. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max (85 °C) Max (125 °C) |
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