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BAV102 Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BAV102 Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 11 page BAV102_BAV103 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 4 — 6 August 2010 4 of 11 NXP Semiconductors BAV102; BAV103 Single general-purpose switching diodes (1) Tamb = 150 °C; typical values (2) Tamb =25 °C; typical values (3) Tamb =25 °C; maximum values Based on square wave currents. Tj =25 °C; prior to surge Fig 1. Forward current as a function of forward voltage Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values VR =VRmax Solid line: maximum values Dotted line: typical values f=1MHz; Tamb =25 °C Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values mbg459 012 600 0 200 400 VF (V) IF (mA) (1) (2) (3) mbg703 10 1 102 IFSM (A) 10−1 tp (μs) 1104 103 10 102 mgd009 0 100 Tj (°C) 200 103 102 10−1 10−2 10 1 IR ( μA) mgd005 010 20 1.6 1.4 1.0 0.8 1.2 VR (V) Cd (pF) |
Numéro de pièce similaire - BAV102_10 |
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Description similaire - BAV102_10 |
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