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BAV102 Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce BAV102
Description  Single general-purpose switching diodes
Download  11 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAV102 Fiches technique(HTML) 4 Page - NXP Semiconductors

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BAV102_BAV103
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 6 August 2010
4 of 11
NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
(1) Tamb = 150 °C; typical values
(2) Tamb =25 °C; typical values
(3) Tamb =25 °C; maximum values
Based on square wave currents.
Tj =25 °C; prior to surge
Fig 1.
Forward current as a function of forward
voltage
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
VR =VRmax
Solid line: maximum values
Dotted line: typical values
f=1MHz; Tamb =25 °C
Fig 3.
Reverse current as a function of junction
temperature
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
mbg459
012
600
0
200
400
VF (V)
IF
(mA)
(1)
(2)
(3)
mbg703
10
1
102
IFSM
(A)
10−1
tp (μs)
1104
103
10
102
mgd009
0
100
Tj (°C)
200
103
102
10−1
10−2
10
1
IR
(
μA)
mgd005
010
20
1.6
1.4
1.0
0.8
1.2
VR (V)
Cd
(pF)


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