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1N4001 Fiches technique(PDF) 1 Page - Gulf Semiconductor |
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1N4001 Fiches technique(HTML) 1 Page - Gulf Semiconductor |
1 / 3 page 1N4001 THRU 1N4007 GENERAL PURPOSE PLASTIC RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250 °C/10sec/0.375”lead length at 5 lbs tension MECHANICAL DATA Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity: color band denotes cathode Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half -wave, 60HZ, resistive or inductive load rating at 25 °C, unless otherwise stated, for capacitive load, derate current by 20%) SYMBOL 1N 4001 1N 4002 1N 4003 1N 4004 1N 4005 1N 4006 1N 4007 units * Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 200 400 600 800 1000 V * Maximum RMS Voltage Vrms 35 70 140 280 420 560 700 V * Maximum DC blocking Voltage Vdc 50 100 200 400 600 800 1000 V * Maximum Average Forward Rectified Current 3/8”lead length at Ta =75 °C If(av) 1.0 A * Peak Forward Surge Current 8.3ms single Half sine-wave superimposed on rated load Ifsm 30.0 A * Maximum Instantaneous Forward Voltage at rated forward current Vf 1.1 V Maximum full load reverse current full cycle at TL =75 °C Ir(av) 30.0 µA Maximum DC Reverse Current Ta =25 °C at rated DC blocking voltage Ta =100 °C Ir 5.0 50.0 µA µA Typical Junction Capacitance (Note 1) Cj 15.0 pF Typical Thermal Resistance (Note 2) R(ja) 50.0 °C/W Storage and Operation Junction Temperature Tstg -50 to +150 °C Note: 1. Measured at 1.0 MHz and applied voltage of 4.0Vdc 2. Thermal Resistance from Junction to Ambient at 0.375”lead length, P.C. Board Mounted * JEDEC Registered value Rev.A6 www.gulfsemi.com |
Numéro de pièce similaire - 1N4001 |
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Description similaire - 1N4001 |
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