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CAT25080HU2I-GT3 Fiches technique(PDF) 9 Page - ON Semiconductor

No de pièce CAT25080HU2I-GT3
Description  8-Kb and 16-Kb SPI Serial CMOS EEPROM
Download  16 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT25080HU2I-GT3 Fiches technique(HTML) 9 Page - ON Semiconductor

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CAT25080, CAT25160
http://onsemi.com
9
READ OPERATIONS
Read from Memory Array
To read from memory, the host sends a READ instruction
followed by a 16−bit address (see Table 11 for the number
of significant address bits).
After receiving the last address bit, the CAT25080/160
will respond by shifting out data on the SO pin (as shown in
Figure 9). Sequentially stored data can be read out by simply
continuing to run the clock. The internal address pointer is
automatically incremented to the next higher address as data
is shifted out. After reaching the highest memory address,
the address counter “rolls over” to the lowest memory
address, and the read cycle can be continued indefinitely.
The read operation is terminated by taking CS high.
Read Status Register
To read the status register, the host simply sends a RDSR
command. After receiving the last bit of the command, the
CAT25080/160 will shift out the contents of the status
register on the SO pin (Figure 10). The status register may
be read at any time, including during an internal write cycle.
While the internal write cycle is in progress, the RDSR
command will output the RDY (Ready) bit status only (i.e.,
data out = FFh).
Figure 9. READ Timing
SCK
SI
SO
BYTE ADDRESS*
01
23
45
67
89
7
6
5
4
3
2
1
0
DATA OUT
MSB
HIGH IMPEDANCE
OPCODE
21
20
22 23 24 25 26 27 28 29 30
00
00
0
1
1
Dashed Line = mode (1, 1)
A0
AN
CS
* Please check the Byte Address Table (Table 11)
0
10
Figure 10. RDSR Timing
01
2
3
4
5
6
7
8
10
911
12
13
14
SCK
SI
DATA OUT
MSB
HIGH IMPEDANCE
OPCODE
SO
7
6
5
4
3
2
1
0
00
0
00
1
0
1
Dashed Line = mode (1, 1)
CS


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