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BD179 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce BD179
Description  Plastic Medium-Power NPN Silicon Transistor
Download  4 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD179 Fiches technique(HTML) 2 Page - ON Semiconductor

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BD179
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
V(BR)CEO
80
-
Vdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
-
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
-
1.0
mAdc
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
hFE
63
15
160
-
-
Collector-Emitter Saturation Voltage (Note 1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
-
0.8
Vdc
Base-Emitter On Voltage (Note 1)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
-
1.3
Vdc
Current-Gain - Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
3.0
-
MHz
1. Pulse Test: Pulse Width
x 300 As, Duty Cycle x 2.0%.
Figure 1. Active Region Safe Operating Area
10
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
3.0
5.0 7.0
10
20
30
50
100
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION
(BASE-EMITTER DISSIPATION IS
SIGNIFICANT ABOVE IC = 2.0 AMP)
PULSE DUTY CYCLE < 10%
70
0.3
0.2
TJ = 150°C
dc
5.0 ms
1.0
100
ms
1.0 ms
The Safe Operating Area Curves indicate IC - VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To
insure
operation
below
the
maximum
TJ,
power-temperature derating must be observed for both
steady state and pulse power conditions.


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