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BCW68GLT3G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BCW68GLT3G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: BCW68GLT1/D BCW68GLT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−EmitterVoltage VCEO −45 Vdc Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −800 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. SOT−23 CASE 318 STYLE 6 http://onsemi.com DG = Specific Device Code M = Date Code* G = Pb−Free Package MARKING DIAGRAM 1 2 3 Device Package Shipping† ORDERING INFORMATION BCW68GLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DG MG G COLLECTOR 3 1 BASE 2 EMITTER (Note: Microdot may be in either location) BCW68GLT3G SOT−23 (Pb−Free) 10000 / Tape & Reel *Date Code orientation and/or overbar may vary depending upon manufacturing location. |
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