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TPS5420-EP Fiches technique(PDF) 3 Page - Texas Instruments |
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TPS5420-EP Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 22 page www.ti.com Dissipation Ratings (1) (2) Recommended Operating Conditions Electrical Characteristics TPS5420-EP SLVS717 – DECEMBER 2006 THERMAL IMPEDANCE PACKAGE JUNCTION-TO-AMBIENT 8-pin D (3) 75 °C/W (1) Maximum power dissipation may be limited by overcurrent protection. (2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or below 125 °C for best performance and long-term reliability. See Thermal Calculations in applications section of this data sheet for more information. (3) Test board conditions: a. 3 in × 3 in, two layers, thickness: 0.062 in b. 2-oz copper traces located on the top and bottom of the PCB MIN MAX UNIT VI Input voltage range, VIN 5.5 35 V TJ Operating junction temperature –55 125 °C T J = –55°C to 125°C, VIN = 5.5 V to 35 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Supply Voltage (VIN Pin) VSENSE = 2 V, Not switching, PH pin open 3 4.4 mA IQ Quiescent current Shutdown, ENA = 0 V 18 50 µA Undervoltage Lockout (UVLO) Start threshold voltage, UVLO 5.3 5.5 V Hysteresis voltage, UVLO 330 mV Voltage Reference TJ = 25°C 1.202 1.221 1.239 Voltage reference accuracy V IO = 0 A – 2 A 1.196 1.221 1.245 Oscillator TJ = 25°C 400 500 600 kHz Internally set free-running frequency TJ = -55°C to 125°C 375 600 kHz Minimum controllable on time 150 200 ns Maximum duty cycle 87% 89% Enable (ENA Pin) Start threshold voltage, ENA 1.3 V Stop threshold voltage, ENA 0.5 V Hysteresis voltage, ENA 450 mV Internal slow-start time (0 ~ 100%) 6.6 8 10.6 ms Current Limit Current limit 3 4 5.2 A Current limit hiccup time 13 16 22 ms Thermal Shutdown Thermal shutdown trip point 135 162 °C Thermal shutdown hysteresis 14 °C Output MOSFET VIN = 5.5 V 150 rDS(on) High-side power MOSFET switch m Ω VIN = 10 V – 35 V 110 230 3 Submit Documentation Feedback |
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