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908E621 Fiches technique(PDF) 11 Page - Freescale Semiconductor, Inc |
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908E621 Fiches technique(HTML) 11 Page - Freescale Semiconductor, Inc |
11 / 65 page Analog Integrated Circuit Device Data Freescale Semiconductor 11 908E621 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS HIGH SIDE OUTPUT HS1 Switch On Resistance TJ = 25°C, ILOAD = 1.0A RDS(ON)-HS1 –185 225 m Ω Over-current Shutdown IHSOC1 6.0 – 9.0 A Over-current Shutdown blanking time(15) tOCB –4-8 – µs Current to Voltage Ratio(16) VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0A) CRRATIOHS1 0.84 1.2 1.56 V/A High Side Switching Frequency(15) fPWMHS –– 25 kHz High Side Freewheeling Diode Forward Voltage TJ = 25°C, ILOAD = 1.0A VHSF –0.9 – V Leakage Current ILeakHS –<0.2 10 µA HIGH SIDE OUTPUTS HS2 AND HS3(17) Switch On Resistance TJ = 25°C, ILOAD = 1.0 A RDS(ON)-HS23 –440 500 m Ω Over-current Shutdown IHSOC23 3.6 – 5.6 A Over-current Shutdown blanking time(15) tOCB –4-8 – µs Current to Voltage Ratio(16) VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0A) CRRATIOHS23 1.16 1.66 2.16 V/A High Side Switching Frequency(15) fPWMHS –– 25 kHz High Side Freewheeling Diode Forward Voltage TJ = 25°C, ILOAD = 1.0A VHSF –0.9 – V Leakage Current ILeakHS –<0.2 10 µA Notes 15. This parameter is guaranteed by process monitoring but is not production tested. 16. This parameter is guaranteed only if correct trimming was applied. 17. The high side HS3 can be only used for resistive loads. Table 3. Static Electrical Characteristics (continued) All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0V ≤ VSUP ≤ 16V, -40°C ≤ TJ ≤ 125°C, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
Numéro de pièce similaire - 908E621_08 |
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Description similaire - 908E621_08 |
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