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TPCS8008-H Fiches technique(PDF) 5 Page - Toshiba Semiconductor |
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TPCS8008-H Fiches technique(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCS8008-H 2009-12-09 5 Ambient temperature Ta (°C) Dynamic input/output characteristics Total gate charge Qg (nC) Ambient temperature Ta (°C) RDS (ON) − Ta Drain-source voltage VDS (V) IDR − VDS Vth − Ta 0.1 10 1 −0.2 0 −1.0 −0.6 −0.4 −0.8 10 3 1 VGS = 0 V Common source Ta = 25°C Pulse test 0 1.6 0.4 0.8 1.2 −40 −80 160 0 40 80 Common source VGS = 10 V Pulse test ID = 1.7 A 0.4 0.8 300 200 100 0 0 24 16 8 0 VDS = 200 V 100 VGS VDS Common source ID = 1.7 A Ta = 25°C Pulse test 5 10 15 50 4 1 2 3 0 −80 0 40 80 120 160 −40 Common source VDS = 10 V ID = 1mA Pulse test 120 5 Ambient temperature Ta (°C) PD – Ta 0 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 (2) (1) 1 0.1 10 100 1000 1 10 100 Ciss Coss Crss Drain-source voltage VDS (V) Capacitance – VDS Common source VGS = 0 V f = 1 MHz Ta = 25°C (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t= 10s |
Numéro de pièce similaire - TPCS8008-H |
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Description similaire - TPCS8008-H |
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