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TPCF8402 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPCF8402 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 11 page TPCF8402 2009-12-10 1 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) • Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) • Enhancement-mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR -30 30 V Gate-source voltage VGSS ±20 ±20 V DC (Note 1) ID -3.2 4.0 Drain current Pulse (Note 1) IDP -12.8 16.0 A Single-device operation (Note 3a) PD (1) 1.35 1.35 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation(Note 3b) PD (2) 1.12 1.12 Single-device operation (Note 3a) PD (1) 0.53 0.53 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation(Note 3b) PD (2) 0.33 0.33 W Single pulse avalanche energy (Note 4) EAS 0.67 2.6 mJ Avalanche current IAR -1.6 2.0 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) Circuit Configuration 1 2 3 4 8 7 6 5 |
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