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TPC8012-H Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce TPC8012-H
Description  Switching Regulator Applications Switching Regulator Applications
Download  7 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8012-H Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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TPC8012-H
2006-01-17
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π-MOSV)
TPC8012-H
Switching Regulator Applications
DC/DC Converter Applications
• Low drain-source ON-resistance: RDS (ON) = 0.28 Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.35 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
1.8
Drain current
Pulse (Note 1)
IDP
7.2
A
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
2.05
mJ
Avalanche current
IAR
1.8
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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