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TPC8012-H Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPC8012-H Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8012-H 2006-01-17 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( π-MOSV) TPC8012-H Switching Regulator Applications DC/DC Converter Applications • Low drain-source ON-resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 kΩ) VDGR 200 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 1.8 Drain current Pulse (Note 1) IDP 7.2 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 2.05 mJ Avalanche current IAR 1.8 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
Numéro de pièce similaire - TPC8012-H |
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Description similaire - TPC8012-H |
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