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2SK2613 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SK2613 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK2613 2010-01-29 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 800 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 1000 V Drain-gate voltage (RGS = 20 kΩ) VDGR 1000 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 8 Drain current Pulse (Note 1) IDP 24 A Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 910 mJ Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 Ω, IAR = 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE JEDEC ― JEITA ― TOSHIBA 2−16C1B Weight: 4.6 g (typ.) 1 3 2 |
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