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2SK1365 Datasheet(Fiches technique) 2 Page - Toshiba Semiconductor

Numéro de pièce 2SK1365
Description  Switching Power Supply Applications
Télécharger  6 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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 2 page
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2SK1365
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±50
nA
Drain cut−off current
IDSS
VDS = 800 V, VGS = 0 V
300
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
1000
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain−source ON resistance
RDS (ON)
ID = 4 A, VGS = 10 V
1.5
1.8
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 4 A
2.0
4.0
S
Input capacitance
Ciss
1300
Reverse transfer capacitance
Crss
100
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
180
pF
Rise time
tr
25
Turn−on time
ton
40
Fall time
tf
20
Switching time
Turn−off time
toff
100
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
120
Gate−source charge
Qgs
70
Gate−drain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 7 A
50
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
7
A
Pulse drain reverse current
(Note 1)
IDRP
21
A
Forward voltage (diode)
VDSF
IDR = 7 A, VGS = 0 V
−1.9
V
Marking
K1365
Lot No.
Note 2
Part No. (or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.




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