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2SJ349 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SJ349
Description  DC−DC Converter, Relay Drive and Motor Drive Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ349 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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2SJ349
2009-12-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = −60 V, VGS = 0 V
−100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −10 A
50
90
Drain−source ON-resistance
RDS (ON)
VGS = −10 V, ID = −10 A
33
45
mΩ
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −10 A
10
20
S
Input capacitance
Ciss
2800
Reverse transfer capacitance
Crss
450
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
1300
pF
Rise time
tr
15
Turn−on time
ton
35
Fall time
tf
25
Switching time
Turn−off time
toff
120
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
90
Gate−source charge
Qgs
65
Gate−drain (“miller”) charge
Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −20 A
25
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−20
A
Pulse drain reverse current
(Note 1)
IDRP
−80
A
Forward voltage (diode)
VDSF
IDR = −20 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
75
ns
Reverse recovery charge
Qrr
IDR = −20 A, VGS = 0 V,
dIDR / dt = 50 A / μs
83
nC
Marking
Lot No.
Note 4
J349
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.


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