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ZRB500 Fiches technique(PDF) 3 Page - Zetex Semiconductors

No de pièce ZRB500
Description  PRECISION 5.0 VOLT MICROPOWER VOLTAGE REFERENCE
Download  5 Pages
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZRB500 Fiches technique(HTML) 3 Page - Zetex Semiconductors

  ZRB500 Datasheet HTML 1Page - Zetex Semiconductors ZRB500 Datasheet HTML 2Page - Zetex Semiconductors ZRB500 Datasheet HTML 3Page - Zetex Semiconductors ZRB500 Datasheet HTML 4Page - Zetex Semiconductors ZRB500 Datasheet HTML 5Page - Zetex Semiconductors  
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ABSOLUTE MAXIMUM RATING
Reverse Current
25mA
Forward Current
25mA
Operating Temperature
-40 to 85°C
Storage Temperature
-55 to 125°C
Power Dissipation (Tamb=25°C)
SOT23
330mW
E-Line, 3 pin (TO92)
500mW
E-Line, 2 pin (TO92)
500mW
SO8
625mW
ELECTRICAL CHARACTERISTICS
TEST CONDITIONS (Unless otherwise stated) Tamb=25°C
SYMBOL PARAMETER
CONDITIONS
LIMITS
TOL.
%
UNITS
MIN
TYP MAX
VR
Reverse Breakdown Voltage
IR=150µA
4.95
4.90
4.85
5.0
5.0
5.0
5.05
5.10
5.15
1
2
3
V
IMIN
Minimum Operating Current
30
50
µA
IR
Recommended Operating
Current
0.05
15
mA
TC †
Average Reverse Breakdown
Voltage Temp. Co.
IR(min) to
IR(max)
15
50
ppm/°C
RS §
Slope Resistance
0.33 1.5
ZR
Reverse Dynamic Impedance
IR =1mA
f = 100Hz
IAC= 0.1 IR
0.4
1
EN
Wideband Noise Voltage
IR= 150µA
f = 10Hz to
10kHZ
100
µV(rms)
† TC = VR Change
x
1000000
VR x Temperature Change
§ RS = V
R
Change(IR (min) to IR (max))
IR (
max) − IR (min)
ZRB500
ZRB500
TYPICAL CHARACTERISTICS
Temperature (°C)
Reference Current (mA)
Frequency (kHz)
Temperature Drift
Slope Resistance v Current
Time (µs)
0500
-40
100
0.1
Slope Resistance v Frequency
-20
0
20
40
60
80
Forward Characteristics
Forward Current (mA)
0.1
1
10
100
1000
IR=150µAto15mA
1
0.1
10
100
1000
10
100
1
0.1
0.01
1000
0
1
2
3
4
Time (µs)
I4=150µA
I4=5mA
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TA=25°C
TA=-40°C
TA=85°C
0
10
0
4.0
6.0
4.96
5.02
5.00
4.98
0
2.0
3.0
1.0
110
2.0
0
10
0
4.0
6.0
2.0
Transient Response
(Single Pulse)
Transient Response
(Repetitive Pulse)
VIN
VR
33K
150µA
5mA
150 µA
1K
5mA
33K
150µA
1K
5mA
IN
R
IN
R
VIN
VR
Reverse Characteristics
Reverse Voltage (V)
0
60
6.0
2.0
4.0
0
10
20
30
40
50
T)=-40°C
T)=85°C
1 - 38
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