BF722 datasheet(3/6 Pages) NXP

No de pièce	BF722

Description	NPN high-voltage transistors

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Fabricant	NXP [NXP Semiconductors]

Site Internet	http://www.nxp.com

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3 / 6 page

1999 Apr 21

3

NXP Semiconductors

Product data sheet

NPN high-voltage transistors

BF720; BF722

THERMAL CHARACTERISTICS

Note

1.

Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

106

K/W

Rth j-s

thermal resistance from junction to soldering point

note 1

25

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 200 V

−

10

nA

IE = 0; VCB = 200 V; Tj = 150 °C

−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

50

nA

hFE

DC current gain

IC = 25 mA; VCE = 20 V

50

−

VCEsat

collector-emitter saturation voltage IC = 30 mA; IB = 5 mA

−

0.6

V

Cre

feedback capacitance

IC = ic = 0; VCE = 30 V; f = 1 MHz

−

1.6

pF

fT

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz

60

−

MHz

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