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BC847BV Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BC847BV Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 Sep 10 2 NXP Semiconductors Product data sheet NPN general purpose double transistor BC847BV FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector capacitance • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN double transistor in a SOT666 plastic package. PNP complement: BC857BV. MARKING PINNING TYPE NUMBER MARKING CODE BC847BV 1F PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage MAM447 13 2 TR1 TR2 6 4 5 12 3 4 6 5 Top view Fig.1 Simplified outline (SOT666) and symbol. |
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