BC636 datasheet(10/15 Pages) NXP

No de pièce	BC636

Description	45 V, 1 A PNP medium power transistors

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BC636_BCP51_BCX51_8

Product data sheet

Rev. 08 — 22 February 2008

10 of 15

NXP Semiconductors

BC636; BCP51; BCX51

45 V, 1 A PNP medium power transistors

VCE = −2V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 10. DC current gain as a function of collector

current; typical values

Fig 11. Collector current as a function of

collector-emitter voltage; typical values

VCE = −2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

IC/IB =10

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 12. Base-emitter voltage as a function of collector

current; typical values

Fig 13. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa226

100

200

300

hFE

0

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

VCE (V)

0

−2.0

−1.6

−0.8

−1.2

−0.4

006aaa230

−0.8

−0.4

−1.2

−1.6

IC

(A)

0

−4.5

−9

−13.5

−18

−22.5

−27

−31.5

IB (mA) = −45 −40.5 −36

006aaa227

−600

−800

−400

−1000

−1200

VBE

(mV)

−200

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aaa228

−102

−103

VCEsat

(mV)

−10

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

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