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74CBTLV1G125GF Fiches technique(PDF) 1 Page - NXP Semiconductors |
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74CBTLV1G125GF Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 18 page 1. General description The 74CBTLV1G125 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 2.3 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74CBTLV1G125 provides a single high-speed line switch. The switch is disabled when the output enable (OE) input is high. To ensure the high-impedance OFF-state during power up or power down, OE should be tied to the VCC through a pullup resistor. The minimum value of the resistor is determined by the current-sinking capability of the driver. 2. Features s Supply voltage range from 2.3 V to 3.6 V s High noise immunity s Complies with JEDEC standard: x JESD8-5 (2.3 V to 2.7 V) x JESD8-B/JESD36 (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114-D exceeds 2000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s 5 Ω switch connection between two ports s Rail to rail switching on data I/O ports s CMOS low power consumption s Latch-up performance meets requirements of JESD78 Class I s IOFF circuitry provides partial power down mode operation s Multiple package options s Specified from −40 °Cto+85 °C and −40 °C to +125 °C 74CBTLV1G125 Single bus switch Rev. 01 — 23 February 2007 Product data sheet |
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