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74AUP1G885GT Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce 74AUP1G885GT
Description  Low-power dual function gate
Download  19 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74AUP1G885GT Fiches technique(HTML) 1 Page - NXP Semiconductors

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1.
General description
The 74AUP1G885 provides two functions in one device. The output state of the outputs
(1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean
function: 1Y = A
× C. The output 2Y provides the Boolean function: 2Y = A × B + A × C.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2.
Features
I Wide supply voltage range from 0.8 V to 3.6 V
I High noise immunity
I Complies with JEDEC standards:
N JESD8-12 (0.8 V to 1.3 V)
N JESD8-11 (0.9 V to 1.65 V)
N JESD8-7 (1.2 V to 1.95 V)
N JESD8-5 (1.8 V to 2.7 V)
N JESD8-B (2.7 V to 3.6 V)
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 5000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101C exceeds 1000 V
I Low static power consumption; ICC = 0.9 µA (maximum)
I Latch-up performance exceeds 100 mA per JESD78 Class II
I Inputs accept voltages up to 3.6 V
I Low noise overshoot and undershoot < 10 % of VCC
I IOFF circuitry provides partial Power-down mode operation
I Multiple package options
I Specified from −40 °Cto+85 °C and −40 °C to +125 °C
74AUP1G885
Low-power dual function gate
Rev. 05 — 26 June 2009
Product data sheet


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