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74AUP1G57GW Fiches technique(PDF) 9 Page - NXP Semiconductors

No de pièce 74AUP1G57GW
Description  Low-power configurable multiple function gate
Download  19 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74AUP1G57GW Fiches technique(HTML) 9 Page - NXP Semiconductors

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74AUP1G57_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 22 June 2009
9 of 19
NXP Semiconductors
74AUP1G57
Low-power configurable multiple function gate
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
All specified values are the average typical values over all stated loads.
[4]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(C
L × VCC
2
× f
o) = sum of the outputs.
CL = 30 pF
tpd
propagation delay
A, B and C to Y;
see Figure 12
[2]
VCC = 0.8 V
-
37.8
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
4.6
10.4
20.9
3.9
21.8
22.3
ns
VCC = 1.4 V to 1.6 V
3.6
7.4
12.2
3.8
13.4
14.1
ns
VCC = 1.65 V to 1.95 V
3.5
6.2
9.9
3.1
11.1
11.8
ns
VCC = 2.3 V to 2.7 V
3.4
5.2
7.4
3.1
8.3
8.8
ns
VCC = 3.0 V to 3.6 V
3.2
4.9
6.6
2.8
7.0
7.4
ns
CL = 5 pF, 10 pF, 15 pF and 30 pF
CPD
power dissipation
capacitance
fi = 1 MHz; VI = GND to VCC
[3][4]
VCC = 0.8 V
-
2.6
-
-
-
-
pF
VCC = 1.1 V to 1.3 V
-
2.8
-
-
-
-
pF
VCC = 1.4 V to 1.6 V
-
2.9
-
-
-
-
pF
VCC = 1.65 V to 1.95 V
-
3.1
-
-
-
-
pF
VCC = 2.3 V to 2.7 V
-
3.7
-
-
-
-
pF
VCC = 3.0 V to 3.6 V
-
4.3
-
-
-
-
pF
Table 9.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 13.
Symbol Parameter
Conditions
25
°C
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85
°C)
Max
(125
°C)


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