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2PA1774RM Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce 2PA1774RM
Description  PNP general purpose transistor
Download  8 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

2PA1774RM Fiches technique(HTML) 4 Page - NXP Semiconductors

  2PA1774RM Datasheet HTML 1Page - NXP Semiconductors 2PA1774RM Datasheet HTML 2Page - NXP Semiconductors 2PA1774RM Datasheet HTML 3Page - NXP Semiconductors 2PA1774RM Datasheet HTML 4Page - NXP Semiconductors 2PA1774RM Datasheet HTML 5Page - NXP Semiconductors 2PA1774RM Datasheet HTML 6Page - NXP Semiconductors 2PA1774RM Datasheet HTML 7Page - NXP Semiconductors 2PA1774RM Datasheet HTML 8Page - NXP Semiconductors  
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2004 Feb 19
4
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −30 V; IE = 0
−100
nA
VCB = −30 V; IE = 0; Tj = 150 °C
−5
μA
IEBO
emitter-base cut-off current
VEB = −4 V; IC = 0
−100
nA
hFE
DC current gain
VCE = −6 V; IC = −1 mA
2PA1774QM
120
270
2PA1774RM
180
390
2PA1774SM
270
560
VCEsat
collector-emitter saturation voltage
IC = −50 mA; IB = −5 mA; note 1
−200
mV
Cc
collector capacitance
IE = ie = 0; VCB = −12 V; f = 1 MHz
2.2
pF
fT
transition frequency
VCE = −12 V; IC = −2 mA;
f = 100 MHz
100
MHz
handbook, halfpage
MDB663
IC (mA)
−10−1
−1
−10
−102
−103
103
hFE
102
10
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
VCE = −6 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MDB664
VBE
(mV)
−400
−200
−600
−1000
−800
−1200
IC (mA)
−10−1
−1
−10
−102
−103
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE = −6 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.


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