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2PA1774M Datasheet(Fiches technique) 5 Page - NXP Semiconductors

Numéro de pièce 2PA1774M
Description  PNP general purpose transistor
Télécharger  8 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

2PA1774M Datasheet(HTML) 5 Page - NXP Semiconductors

  2PA1774M Datenblatt HTML 1Page - NXP Semiconductors 2PA1774M Datenblatt HTML 2Page - NXP Semiconductors 2PA1774M Datenblatt HTML 3Page - NXP Semiconductors 2PA1774M Datenblatt HTML 4Page - NXP Semiconductors 2PA1774M Datasheet HTML 5Page - NXP Semiconductors 2PA1774M Datenblatt HTML 6Page - NXP Semiconductors 2PA1774M Datenblatt HTML 7Page - NXP Semiconductors 2PA1774M Datenblatt HTML 8Page - NXP Semiconductors  
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2004 Feb 19
5
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PA1774M series
handbook, halfpage
MDB665
IC (mA)
−10−1
−1
−10
−102
−103
−103
VCEsat
(mV)
−102
−10
(1)
(3)
(2)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MDB666
VBEsat
(mV)
−400
−200
−600
−1000
−800
−1200
−10−1
−1
−10
−102
IC (mA)
(1)
(3)
(2)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
IC
(A)
0
−6
−2
−8
−10
VCE (V)
−4
0
−0.2
−0.12
−0.16
−0.04
−0.08
MDB667
(1)
(3)
(4)
(5)
(7)
(8)
(9)
(10)
(6)
(2)
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = −2.7 mA.
(2) IB = −2.43 mA.
(3) IB = −2.16 mA.
(4) IB = −1.89 mA.
(5) IB = −1.62 mA.
(6) IB = −1.35 mA.
(7) IB = −1.08 mA.
(8) IB = −0.81 mA.
(9) IB = −0.54 mA.
(10) IB = −0.27 mA.
MDB668
IC (mA)
−10−1
−1
−10
−102
−103
RCEsat
(
Ω)
103
102
10
1
(2)
(3)
(1)
Fig.7
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.


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