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2PA1576Q Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce 2PA1576Q
Description  PNP general-purpose transistor
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

2PA1576Q Fiches technique(HTML) 2 Page - NXP Semiconductors

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2PA1576_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
2 of 7
NXP Semiconductors
2PA1576
PNP general-purpose transistor
4.
Marking
[1]
* = -: made in Hong Kong
* = t: made in Malaysia
5.
Limiting values
[1]
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6.
Thermal characteristics
[1]
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Table 3.
Marking codes
Type number
Marking code[1]
2PA1576Q
F*Q
2PA1576R
F*R
2PA1576S
F*S
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−60
V
VCEO
collector-emitter voltage
open base
-
−50
V
VEBO
emitter-base voltage
open collector
-
−6V
IC
collector current (DC)
-
−150
mA
ICM
peak collector current
-
−200
mA
IBM
peak base current
-
−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
[1] --625
K/W


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